March 21, 2024 — According to reports, Odyssey Semiconductor Technologies Inc., a company focused on developing high-voltage power switching components and systems based on gallium nitride (GaN) processing technology, has agreed to sell its assets for $9.52 million and then dissolve. Odyssey has a 10,000-square-foot semiconductor wafer fabrication facility equipped with a proportion of Class […]
Electrical Specifications: Physical Characteristics: Additional Details: Description: Explore the high-performance capabilities of the Infineon FZ400R12KE3, an active N-Channel Insulated Gate Bipolar Transistor (IGBT) module with a collector current of 650 A and a collector-emitter voltage of 1200 V. This module is designed with a built-in diode for enhanced functionality. The flange mount, rectangular package with […]
Fuji 1MBI300N-120 IGBT module: Features: Applications: Maximum Ratings and Characteristics:
Fuji #7MBP75RE120 Power Module Features Absolute Maximum Ratings: Collector-Emitter Voltage (Vces): 1200V Gate-Emitter Voltage (VGES): ±20V Collector Current (Ic): 75A Collector Current Peak (Icp): 150A Collector Power Dissipation (Pc): 500W Collector-Emitter Voltage (VCES): 2500V Operating Junction Temperature (Tj): +150°C Storage Temperature (Tstg): -40 to +125°C Mechanical Characteristics: Mounting M5 Screw Torque: 2.5~3.5*6 N·m Weight (Typical): […]
The FUJI IGBT module 1MBI600V-120 is a high-performance insulated-gate bipolar transistor (IGBT) module, designed and manufactured by FUJI Electric. This module (1MBI600V-120) has a voltage rating of 600V and a maximum collector current of 120A, making it suitable for a wide range of high-power applications, including motor control, power supplies, and renewable energy systems. The […]
December 25, 2023 — STMicroelectronics recently announced that it has signed a long-term silicon carbide (SiC) supply agreement with Li Auto, a leader in China’s new energy vehicle market that designs, develops, manufactures, and sells smart premium electric vehicles. Under this agreement, STMicroelectronics (”ST”) will provide Li Auto with SiC MOSFET devices to support Li […]
Introduction: The Semikron SK35GAL12T4 IGBT Module stands out for its compact design, enabling convenient installation with just one screw. The integration of Direct Copper Bonded Aluminium Oxide Ceramics ensures effective heat transfer and isolation, enhancing overall performance. This module is equipped with the latest Trench4 IGBT technology and Cal4F diode technology, setting it apart in […]
the Fuji 2MBI200VB-120 IGBT Module, a powerful solution featuring: Ideal for various applications including: 2MBI200VB-120. IGBT Modules. IGBT MODULE (V series). 1200V / 200A / 2 in one package
The Mitsubishi PM15RSH120 is an Intelligent Power Module (IPM) designed for high-performance applications, leveraging advanced IGBT technology for reliable and damage-resistant operation. This top-grade module boasts a robust design and is equipped with a built-in logical gate drive, optimizing the functionality of the transistor module. Key features of the PM15RSH120 include a comprehensive power circuit […]