At the recent PCIM Europe 2023 conference, several silicon carbide device manufacturers and university researchers introduced and shared performance characteristics of SiC MOSFETs at the 3.3-kV voltage rating. This voltage is increasingly being seen as key to meeting several future applications, such as medium-voltage grid power conversion at a 1,500-V DC-link voltage, photovoltaics and wind renewable-energy […]
The Fuji 1MBI1500UE-330 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. IGBT modules are widely used in power electronics applications to control high voltage and high current circuits, such as in motor drives, inverters, converters, and power supplies. Here is some general information about the Fuji 1MBI1500UE-330 IGBT module:
The information provided seems to describe the electrical characteristics and ratings of a Semiconductor device, likely an IGBT (Insulated Gate Bipolar Transistor) or a power module. Here’s a summary of the provided specifications:Iv CEx (Collector-Emitter voltage): 350VCollector-Emitter voltage when the collector current (IC) is 1A and the base-emitter voltage (VEB) is 2V.V CEX (Collector-Emitter Voltage): […]
The Mitsubishi CM1000E4C-66R is an IGBT (Insulated Gate Bipolar Transistor) module with the following specifications and features: Applications: Additional information:
The Infineon FZ1500R33HE3 IGBT module:Supply voltage VDC (VDC to GND):16 VAverage supply current IDC:1SP0635x2M1(C) only: 400 mA1SP0635x2M1(C) with three 1SP0635D2S1(C): 1130 mAGate output power:1SP0635x2M1(C) Ta<70°C: 3 W1SP0635x2M1(C) Ta=85°C: 2.2 W1SP0635D2S1(C) Ta<70°C: 2.6 W1SP0635D2S1(C) Ta=85°C: 2 WSwitching frequency f:1SP0635x2M1(C) Ta<70°C: 2.9 kHz1SP0635x2M1(C) Ta=85°C: 2.1 kHz1SP0635D2S1(C) Ta<70°C: 2.5 kHz1SP0635D2S1(C) Ta=85°C: 1.9 kHzGate peak current lout: Note 9: […]
The Infineon FZ1200R33KF2C IGBT moduleManufacturer: Infineon TechnologiesFeatures:4th generation High Power IGBT technologyHigh switching frequency capabilityLow saturation voltageLow loss and low noise operationIsolated gate drive for improved noise immunity and robustnessProtection features for over-current, short-circuit, and temperatureSuitable for motor drives, power supplies, and industrial applicationsMaximum Ratings and Characteristics (Tj = 25°C unless otherwise specified):Collector-Emitter voltage (Vces): […]
The Infineon FF400R33KF2C is a high-power dual IGBT module designed for traction and industrial applications. Here are the specifications for the FF400R33KF2C IGBT module: The FF400R33KF2C module offers a high voltage rating of 3300 V and a maximum collector current of 400 A. It features low collector-emitter saturation voltage, low gate-emitter leakage current, and high […]
The Mitsubishi RM600DY-66S is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Mitsubishi Electric. Here are some details about this module:
The Mitsubishi CM1200HC-66H is an IGBT module with the following features: Here are the maximum ratings and characteristics of the module: Additionally, here are some electrical characteristics of the module: The module has a mounting torque of M6 (mounting screw) and weighs approximately 1.5kg.