Infineon Technologies. It is specifically designed for high-power switching applications. Here are some key specifications and features of the FP15R12YT3:Manufacturer: Infineon TechnologiesPart Number: FP15R12YT3Power Module Type: IGBT (Insulated Gate Bipolar Transistor)Maximum Collector Current (IC): 15ACollector-Emitter voltage (VCE): 1200VTotal Power Dissipation (Ptot): 150WGate-Emitter voltage (VGES): +/-20VTemperature Range: -40 to 150°CWeight: Not specifiedSome notable features of the […]
Sales Email: sales@shunlongwei.com Part Number: FP15R12KE3Manufacturer: InfineonProduct Category: IGBT ModulesProduct: IGBT Silicon ModulesConfiguration: HexCollector-Emitter voltage (VCEO) Max: 1600 VContinuous Collector Current at 25°C: 25 AContinuous Collector Current at Rectifier Output (IRMSmax): 36 AMaximum Operating Temperature: +125°CPackage/Case: EASY2Brand: Infineon TechnologiesMaximum Gate Emitter voltage: +/- 20 VTotal Power Dissipation at TC=25°C (Ptot): 89 WMinimum Operating Temperature: -40°CMounting […]