January 12, 2024 — Renesas Electronics announced on January 11 that it has reached a final agreement to acquire Transphorm, Inc., a global leader in robust gallium nitride (“GaN”) power semiconductors. The transaction values Transphorm at approximately $339 million. The acquisition will provide Renesas with in-house GaN technology, a key next-generation material for power semiconductors, […]
Explore the advanced features and specifications of the SANREX DF150AA160 IGBT Module in this comprehensive datasheet. Ideal for various applications such as AC and DC motor drives, AVR, and three-phase switching, this module offers high reliability and efficient performance. With a maximum junction temperature of 150°C and unique glass passivation, it provides a robust solution […]
January 8, 2024 — onsemi recently announced the launch of nine new EliteSiC power integrated modules (PIMs) that provide bidirectional charging capabilities for DC ultra-fast electric vehicle (EV) chargers and energy storage systems (ESS). The silicon carbide-based solutions will dramatically improve system cost with higher efficiency and simpler cooling mechanisms that can reduce size by […]
Semikron SKKT 106B16 E IGBT Module – Specifications, Features, and Applications Explore the powerful Semikron SKKT 106B16 E IGBT Module, a cutting-edge semiconductor device designed for various applications. Here are the key specifications: Designed with precision and reliability in mind, the Semikron SKKT 106B16 E offers superior performance in a compact module, making it suitable […]
Gallium nitride-enabled LED lighting is already making huge reductions to the amount of electrical power used globally, and in ten years’ time, it’s predicted that those savings could be as high as 46%. But when it comes to the consumption of electricity, there is another electronics technology that could prove even more valuable in the […]
Fuji #7MBP75RE120 Power Module Features Absolute Maximum Ratings: Collector-Emitter Voltage (Vces): 1200V Gate-Emitter Voltage (VGES): ±20V Collector Current (Ic): 75A Collector Current Peak (Icp): 150A Collector Power Dissipation (Pc): 500W Collector-Emitter Voltage (VCES): 2500V Operating Junction Temperature (Tj): +150°C Storage Temperature (Tstg): -40 to +125°C Mechanical Characteristics: Mounting M5 Screw Torque: 2.5~3.5*6 N·m Weight (Typical): […]
“Mitsubishi CM800DU-12H IGBT Module: Specifications, Features, and Performance Details for High-Power Applications” CM800DU-12H Specifications:
Infineon’s DD260N18KHPSA1 IGBT Module boasts a range of cutting-edge features designed to ensure high reliability and optimal performance. Leveraging Pressure Contact Technology, this module excels in robustness. The implementation of Advanced Medium Power Technology (AMPT) further enhances its capabilities, making it a reliable choice in various industrial applications. The module adheres to industrial standards and […]
The FUJI IGBT module 1MBI600V-120 is a high-performance insulated-gate bipolar transistor (IGBT) module, designed and manufactured by FUJI Electric. This module (1MBI600V-120) has a voltage rating of 600V and a maximum collector current of 120A, making it suitable for a wide range of high-power applications, including motor control, power supplies, and renewable energy systems. The […]