#MG100J2YS1 Toshiba MG100J2YS1 New 2IGBT: 100A600V, MG100J2YS1 pictures, MG100J2YS1 price, #MG100J2YS1 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Key Specifications:
- Collector-Emitter voltage Vces: 600V
- Gate-Emitter voltage VGES: ±20V
- Collector current IC: 100A
- Collector current Icp: 200A
- Collector power dissipation Pc: 450W
- Collector-Emitter voltage VCES: 2500V
- Operating junction temperature Tj: +150°C
- Storage temperature Tstg: -40 to +125°C
- Mounting screw torque: 3.3 * 1 N·m