#MG150Q2YS1 Toshiba MG150Q2YS1 New TOSHIBA ger Module silicon n channel IGBT 150A/1200V/IGBT/2U , MG150Q2YS1 pictures, MG150Q2YS1 price, #MG150Q2YS1 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
MG150Q2YS1 Description
High power switching Applichations motor control applions
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current IC:200A
Collector current Icp:400A
Collector power dissipation Pc:1250W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3/3 N·m