Toshiba MG300Q1US11 In-Stock

#MG300Q1US11 Toshiba MG300Q1US11 New IGBT: 300A1200V, MG300Q1US11 pictures, MG300Q1US11 price, #MG300Q1US11 supplier
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MG300Q1US11 Description

MG300Q1US11, V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications

MG300Q1US11  1.03 lbs

Target_Applications

MG300Q1US11 could be used in High Power Switching Applications Motor Control Applications

Features

INSULATED GATE BIPOLAR TRANSISTOR
IGBT: 300A1200V