Toshiba MG400Q2YS60A In-Stock

Update: November 16, 2023 Tags:icIGBT

 

#MG400Q2YS60A Toshiba MG400Q2YS60A New 2IGBT: 400A1200V, MG400Q2YS60A pictures, MG400Q2YS60A price, #MG400Q2YS60A supplier
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MG400Q2YS60A Description

MG400Q2YS60A, TRANS IGBT MODULE N-CH 1200V 400A;

MG400Q2YS60A  0.83 lbs

Target_Applications

MG400Q2YS60A could be used in High Power Switching / Motor Control Applications

Features

High Power Switching Applications Motor Control Applications
· Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)
· The electrodes are isolated from case.
· Low thermal resistance.
· VCE (sat) = 2.4 V (typ.)

Maximum ratings and characteristics 

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current IC:400A

Collector current Icp:800A

Collector power dissipation Pc:3750W

Collector-Emitter voltage VCES:2500(AC 1 min) V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3(M5) N·m