#MG500Q1US1 Toshiba MG500Q1US1 New 500A/1200V/IGBT/1U, MG500Q1US1 pictures, MG500Q1US1 price, #MG500Q1US1 supplier
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High Power switching applications
. High Input Impedance
. High Speed :tf=0.5us(Max)
trr=0.5us(Max)
. Low Saturation voltage: VEC(sat)=4.0V(Max)
. Enhancement-Mode
. The Electrodes are Isolated from Case.
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current IC:500A
Collector current Icp:1000A
Collector power dissipation Pc:2900W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque (Terminal:M4/M6/Mounting) 2/3/3 N·m