Toshiba MG50Q6ES40 In-Stock

#MG50Q6ES40 Toshiba MG50Q6ES40 New 6IGBT: 50A/1200V, MG50Q6ES40 pictures, MG50Q6ES40 price, #MG50Q6ES40 supplier






MG50Q6ES40 Description
MG50Q6ES40 could be used in High Power Switching / Motor Control Applications
. The Elect rodes are Isolated from Case.
. 6 IGBTs are Built Into 1 Package.
. Enhancement-Mode
. Low Saturation voltage
: VCE(sat)=4.0V(Max)
. High Speed   : tf=0.5us(Max.)
· Low VCE(sat)
· Compact package
· P.C. board mount
· converter diode bridge, Dynamic brake circuit
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings (Ta=25°C)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current IC:50A
Collector current Icp:100A
Collector power dissipation Pc:250W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2/3 N·m