Toshiba MG75Q2YS42 New IGBT Module in stock

Sales Email: sales@shunlongwei.com

Introducing the Toshiba MG75Q2YS42, a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) module designed specifically for high power switching and motor control applications.

With a maximum collector current of 75A and collector-emitter voltage of 1200V, the MG75Q2YS42 provides robust power handling capabilities for demanding industrial applications.

One notable feature of this module is the inclusion of an ultra-soft fast recovery diode (USFD), which helps reduce noise and improves overall performance. Additionally, the module incorporates an isolated heat sink (terminal to base), ensuring safety during operation.

The ABSOLUTE MAXIMUM RATINGS for the MG75Q2YS42 include a collector power dissipation of 560W and a wide junction temperature range of -40°C to 150°C, allowing for operation in challenging environments.

This module offers an isolation voltage of 2500 VRMS (AC 1 minute) and features screw torque terminals of 3/3 N.m, facilitating secure and reliable connections.

In summary, the Toshiba MG75Q2YS42 is a high-power switching and motor control IGBT module that combines high-speed performance with low saturation voltage. Its built-in ultra-soft fast recovery diode reduces noise, and the isolated heat sink enhances safety. With its impressive specifications and robust design, it is an excellent choice for various motor control applications that demand high power and reliability.