Toshiba TPH2R306NH In-Stock

#TPH2R306NH Toshiba TPH2R306NH New TPH2R306NH Transistor POWER, FET, FET General Purpose Power; TPH2R306NH , TPH2R306NH pictures, TPH2R306NH price, #TPH2R306NH supplier
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METAL-OXIDE semiconductor
JESD-30 Code: S-PDSO-F5
Number of Elements: 1
Number of Terminals: 5
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: SQUARE
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 200 A
Surface Mount: YES
Terminal Form: FLAT
Terminal Position: DUAL
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Transistor POWER, FET, FET General Purpose Power