Ultra-high-speed control IC technology maximises performance of GaN devices

Update: April 1, 2023

ROHM’s ultra-high-speed Control IC technology maximises the performance of GaN and other high-speed switching devices. While the adoption of GaN devices has grown in recent years due to their outstanding high-speed switching characteristics, the speed of control ICs, which are responsible for directing the driving of these devices, has become demanding.

In response, the company has evolved its ultra-high-speed pulse control technology Nano Pulse Control. It is developed for power supply ICs, succeeding in greatly enhancing the control pulse width from the conventional 9ns to an industry-best 2ns. Employing this technology allowed the company to establish its ultra-high-speed control IC technology that maximises the performance of GaN devices.

When pursuing miniaturisation of the power supply circuit, it is essential to decrease the size of the peripheral components via high-speed switching. Accomplishing this needs a control IC that can take advantage of the drive performance of high-speed switching devices such as GaN devices.

The company launched ultra-high-speed Control IC technology optimised for GaN devices using proprietary analog power supply technology Nano Pulse Control to offer solutions incorporating peripheral components.

The company is currently working to commercialise control ICs employing this technology, with plans to start sample shipment of 100V 1ch DC-DC Control IC in the second half of 2023. Utilising its GaN devices (EcoGaN series) is predicted to result in considerable energy savings and miniaturisation in various applications, including base stations, data centres, FA equipment, and drones.

Professor Yusuke Mori, Graduate School of Engineering, Osaka University, said: “GaN has been highly anticipated for many years as a power Semiconductor material that can achieve energy savings, but there are obstacles such as quality and cost. Under these circumstances, ROHM has established a mass production system for GaN devices that deliver improved reliability while also developing Control ICs that can maximise their performance. This represents a huge step towards the widespread adoption of GaN devices. To truly demonstrate the performance of power semiconductors, it is necessary to organically link each technology, such as wafers, devices, Control ICs, and modules. In this regard, Japan is home to many leading companies, including ROHM. I hope to contribute to achieving a decarbonised society by collaborating our GaN on GaN wafer technology and ROHM’s devices as well as Control ICs and modules.”