VISHAY SIHF22N60E-E3 In-Stock

VISHAY SIHF22N60E-E3 In-Stock

#SIHF22N60E-E3 VISHAY SIHF22N60E-E3 New Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3, SIHF22N60E-E3 pictures, SIHF22N60E-E3 price, #SIHF22N60E-E3 supplier
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Manufacturer Part Number: SIHF22N60E-E3
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: VISHAY INTERTECHNOLOGY INC
Package Description: FLANGE MOUNT, R-PSFM-T3
Manufacturer: Vishay Intertechnologies
Risk Rank: 1.09
Avalanche Energy Rating (Eas): 367 mJ
Case Connection: ISOLATED
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 600 V
Drain Current-Max (Abs) (ID): 21 A
Drain Current-Max (ID): 21 A
Drain-source On Resistance-Max: 0.18 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-220AB
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 227 W
Pulsed Drain Current-Max (IDM): 56 A
Subcategory: FET General Purpose Power
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3