100V bi-directional GaN transistor switches power rails

It “can be employed in 48V or 60V battery management systems, as well as for high-side load switch applications in bidirectional converters and switching circuits in power systems”, according to the company, which sees it being used in home batteries, portable charging station, e-scooters and e-bikes.

Called INV100FQ030A, it has two drains, a gate, and no source connection. The drains are symmetrical and there are no parasitic diodes from drain to drain.

Maximum on-resistance is 3.2mΩ (2.5mΩ typ, +5Vgate, 25A) and it can carry 100A – all at 25°C.

The device is particularly suited to switching the negative rail in a two wire power supply, as it is ‘on’ when the gate is 5V above either of the drains, and off when the gate is negative with respect to both drains or, as usually used, at the same potential as one drain and negative of the other. The company gave Electronics Weekly a detailed description of this when it introduced its second generation 40V symmetrical hemt.

Gate threshold is typically 1.1V and can range across 800mV to 2.5V. As is usual with GaN hemts, abs max gate voltage is 6V – close to the normal turn-on voltage – accurate gate voltage control is important.

For ruggedness, up to 300,000 5ms 120V drain-to-drain pulses can be survived at the maximum operating temperature of 150°C. Minimum temperature is -40°C, and junction-to-board thermal resistance is 1.92°C/W.

Drain to drain leakage in either direction is typically 1µA (4µA max) with the gate connected to one drain and the other at +80V.

INNDBMS120LS1 is a battery management demo board that uses eight INV100FQ030A in parallel

Although operating speed is not discussed, some gate dynamical characteristics are: 3.3nF input capacitance and a total gate charge of 90nC (50V, 25A, 5Vgate).

Packaging is 4 x 6 x 0.85mm surface-mount.

Find the INV100FQ030A bi-directional hemt product page here – click ‘demo manual’ on this page to get clear circuit diagrams of the demo board (the bulk of this document is in Chinese).

*this is a copy of the link on the Innoscience website