Datasheets:FDC8884Product Photos:SOT-23-5SOT-23-6Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:FETs – SingleSeries:PowerTrench®Packaging:Tape & Reel (TR)FET Type:mosfet N-Channel, Metal OxideFET Feature:Logic Level GateDrain to Source voltage (Vdss):30VCurrent – Continuous Drain (Id) @ 25° C:6.5A (Ta), 8A (Tc)Rds On (Max) @ Id, Vgs:23 mOhm @ 6.5A, 10VVgs(th) (Max) @ Id:3V @ 250µAGate Charge (Qg) @ Vgs:7.4nC @ 10VInput Capacitance (Ciss) @ Vds:465pF @ 15VPower – Max:800mWMounting Type:Surface MountPackage / Case:SOT-23-6Supplier Device Package:6-SSOTDynamic Catalog:N-Channel Logic Level Gate FETsOther Names:FDC8884-NDFDC8884TR #FDC8884 Fairchild Semiconductor FDC8884 New N-Channel Power Trench® mosfet, 30 V, 6.5 A, 23 mΩ, 3000-REEL, FDC8884 pictures, FDC8884 price, #FDC8884 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Part Number: FDC8884
Brand Name: ON Semiconductor
Pbfree Code: Active
Ihs Manufacturer: ON Semiconductor
Package Description: SMALL OUTLINE, R-PDSO-G6
Manufacturer Package Code: 419BL
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: ON Semiconductor
Risk Rank: 0.92
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (Abs) (ID): 8 A
Drain Current-Max (ID): 6.5 A
Drain-source On Resistance-Max: 0.023 Ω
FET Technology: METAL-OXIDE Semiconductor
Feedback Cap-Max (Crss): 25 pF
JEDEC-95 Code: MO-193AA
JESD-30 Code: R-PDSO-G6
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 6
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 1.6 W
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Time
N-Channel Power Trench® mosfet, 30 V, 6.5 A, 23 mΩ, 3000-REEL
Brand Name: ON Semiconductor
Pbfree Code: Active
Ihs Manufacturer: ON Semiconductor
Package Description: SMALL OUTLINE, R-PDSO-G6
Manufacturer Package Code: 419BL
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: ON Semiconductor
Risk Rank: 0.92
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (Abs) (ID): 8 A
Drain Current-Max (ID): 6.5 A
Drain-source On Resistance-Max: 0.023 Ω
FET Technology: METAL-OXIDE Semiconductor
Feedback Cap-Max (Crss): 25 pF
JEDEC-95 Code: MO-193AA
JESD-30 Code: R-PDSO-G6
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 6
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 1.6 W
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Time
N-Channel Power Trench® mosfet, 30 V, 6.5 A, 23 mΩ, 3000-REEL