FP35R12W2T4_B11 Technical Analysis: An Integrated 1200V H-Bridge IGBT Module
FP35R12W2T4_B11: 1200V, 35A Four-Pack IGBT Module
Introduction and Core Highlights
The Infineon FP35R12W2T4_B11 is a Four-Pack IGBT module that integrates a full H-bridge topology into a compact EasyPIM™ 2B housing. This module leverages Infineon’s robust TRENCHSTOP™ IGBT4 technology to deliver a balanced performance profile for low-to-mid-power inverter systems. The integration of four IGBTs and four Emitter Controlled 4 diodes simplifies the power stage design for various applications. An integrated NTC thermistor provides a direct path for temperature monitoring, a critical function for achieving high system reliability.
- Core Specifications: 1200V | 35A | VCE(sat) 1.85V (typ. at 125°C)
- Key Advantages: Streamlines H-bridge inverter designs, facilitates precise thermal monitoring.
Download Official Datasheet (PDF)
Technical Analysis: H-Bridge Integration and Thermal Performance
The engineering value of the FP35R12W2T4_B11 extends beyond its individual components. By integrating a complete H-bridge configuration into a single EasyPIM™ 2B package, the module significantly reduces the complexity of both the mechanical and electrical layout. Compared to a design using four discrete IGBTs, this module minimizes stray inductance between switches, which can lower voltage overshoots during fast switching events. This streamlined approach helps accelerate the design cycle and can enhance overall system robustness. For more information on topology choices, see our guide on selecting the right IGBT topology.
At the silicon level, this module utilizes Infineon’s TRENCHSTOP™ IGBT4 technology, which provides a well-balanced trade-off between on-state and switching losses. The typical collector-emitter saturation voltage (VCE(sat)) is 1.85V at a junction temperature of 125°C, ensuring manageable conduction losses. Paired with an Emitter Controlled 4 diode optimized for soft switching recovery, this module achieves an optimal efficiency point for applications operating in the low to medium switching frequency range. This balance is key to achieving high performance without requiring overly complex gate drive schemes.
Effective thermal management is directly addressed by the module’s packaging and integrated features. The thermal resistance from junction to case (Rth(j-c)) for each IGBT is specified at a maximum of 0.43 K/W. This value can be thought of as the width of a pipe for heat removal; a lower value means heat can flow more easily away from the silicon to the heatsink. To further aid in thermal design, the module includes an integrated NTC thermistor. This allows for direct monitoring of the module’s temperature, enabling the control system to implement over-temperature protection and ensure the device operates within its safe operating area.
Optimized Application Scenarios
- Motor Drives: The integrated H-bridge topology is ideal for four-quadrant DC motor controllers and single-phase AC motor drives. The 10 µs short-circuit withstand time provides critical protection in demanding drive cycles.
- Solar Inverters: With a 1200V blocking voltage, this module offers sufficient design margin for the DC-AC conversion stage in string solar inverters. Its efficiency helps maximize energy harvest.
- Uninterruptible Power Supplies (UPS): The H-bridge configuration is a fundamental building block for the inverter stage of online UPS systems. The compact EasyPIM™ package enables higher power density in the final product.
- Auxiliary Inverters: Suitable for various auxiliary power supplies found in larger systems, where a compact and reliable power conversion stage is required.
This module is best matched for inverter stages up to 15 kW requiring a compact H-bridge topology with proven reliability and integrated thermal sensing.
Key Specifications of the FP35R12W2T4_B11
| Parameter | Value | Conditions |
|---|---|---|
| Absolute Maximum Ratings | ||
| Collector-Emitter Voltage (VCES) | 1200 V | Tvj = 25°C |
| Continuous DC Collector Current (IC nom) | 35 A | TC = 100°C |
| Repetitive Peak Collector Current (ICRM) | 70 A | tp = 1 ms |
| Gate-Emitter Peak Voltage (VGES) | +/-20 V | |
| Short Circuit Withstand Time (tSC) | 10 µs | VGE ≤ 15V, VCC = 800V, Tvj ≤ 150°C |
| IGBT Inverter Characteristics (Tvj = 125°C unless otherwise specified) | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.85 V (typ.) | IC = 35 A, VGE = 15 V |
| Turn-on Switching Energy (Eon) | 2.40 mJ (typ.) | IC = 35 A, VCE = 600V, RG = 39 Ω |
| Turn-off Switching Energy (Eoff) | 2.10 mJ (typ.) | IC = 35 A, VCE = 600V, RG = 39 Ω |
| Thermal and Mechanical Characteristics | ||
| Thermal Resistance, Junction to Case (Rth(j-c)) per IGBT | 0.43 K/W (max.) | |
| Mounting Torque (M4 screws) | 1.25 – 1.75 Nm | Recommended mounting torque |
Engineer’s FAQ
- How should the integrated NTC thermistor be used for thermal protection?
- The datasheet provides a detailed R/T characteristics table for the NTC. To implement protection, a monitoring circuit should read the NTC’s resistance. This value can then be correlated to a temperature (e.g., 5.0 kΩ at 25°C, 0.36 kΩ at 100°C). Your system’s microcontroller can use this data to trigger a warning or a shutdown when the temperature approaches the maximum operating junction temperature of 150°C. For a deeper look at thermal design, consult this practical guide to the Zth curve.
- What is the specified mounting torque for this EasyPIM™ 2B module?
- The datasheet specifies a recommended mounting torque between 1.25 Nm and 1.75 Nm for the M4 mounting screws. Applying torque within this range is critical for ensuring good thermal contact with the heatsink without inducing mechanical stress on the module’s ceramic substrate.
- Is the FP35R12W2T4_B11 suitable for high-frequency applications?
- This module uses TRENCHSTOP™ IGBT4 technology, which is optimized for a balance between conduction and switching losses. It performs well in applications with typical switching frequencies up to approximately 20 kHz, such as industrial motor drives. For higher frequencies where switching losses become dominant, newer IGBT generations or SiC modules might be more appropriate.
Enabling Compact and Reliable Power Conversion
By providing a complete H-bridge power stage in a single, thermally efficient package, the FP35R12W2T4_B11 module allows engineers to focus on system-level innovation. The combination of proven TRENCHSTOP™ IGBT4 silicon, an integrated NTC for safety, and the compact EasyPIM™ footprint facilitates the development of robust and space-saving power conversion systems for a variety of industrial applications.