Fuji 2MBI200U4H-120 IGBT Module. This module is used in power electronics applications for switching high currents and voltages. Here are the key specifications:
Absolute Maximum Ratings:
- Collector-Emitter Voltage (Vces): 1200V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (Ic): 300A
- Peak Collector Current (Icp): 600A
- Collector Power Dissipation (Pc): 1040W
- Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
Additional Information:
- Mounting Screw Torque (*2): 3.5 N·m
- Mounting Screw Torque (*3): 4.5 N·m