February 29, 2024 — Vishay Intertechnology, Inc. recently introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for […]
In the fast-paced realm of high-power industrial applications, the IXYS MCC162-18io1 power module emerges as a technological powerhouse. Specifically crafted for robust performance, this module comprises two IGBT modules arranged in a half-bridge configuration, each boasting an impressive rating of 900V and 162A. Integrated Intelligence and Protection: At its core, the MCC162-18io1 module encapsulates an […]
3D-rendered robotic arm assembling solid-state battery cells Table of Contents: Introduction to Power Electronics Definition and Basic Concept Historical Development and Evolution Key Components of Power Electronics Efficiency and Size Considerations Heat Dissipation and Thermal Management Applications in Various Systems Voltage and Frequency Regulation Conversion Techniques Protection and Safety Mechanisms Future Trends and Innovations Conclusion […]
January 30, 2024 — According to reports, many chip fabs are expected to start mass production in Japan in 2024, which will stimulate the growth and development of Japan’s domestic semiconductor supply chain and improve Japan’s chip manufacturing capabilities. In Kikuyo Town, Kumamoto Prefecture, Japan, Japan Advanced Semiconductor Manufacturing (JASM), invested by TSMC, Sony and […]
Proper sequencing of the multiple power rails in a system is a critical function and can be accomplished using different approaches. Experienced designers know that one of the riskiest periods in a product’s operating cycle is when power is turned on. This power-up phase is when each of the multiple power rails must come up […]
Electrical Specifications: Physical Characteristics: Additional Details: Description: Explore the high-performance capabilities of the Infineon FZ400R12KE3, an active N-Channel Insulated Gate Bipolar Transistor (IGBT) module with a collector current of 650 A and a collector-emitter voltage of 1200 V. This module is designed with a built-in diode for enhanced functionality. The flange mount, rectangular package with […]
Semikron SKKD 46/12 IGBT Module – A Comprehensive Guide Explore the features and specifications of the Semikron SKKD 46/12 IGBT module, a high-performance diode with a semiconductor structure in a double series. Manufactured by Semikron, this module is designed for various applications, ensuring reliability and efficiency. Key Specifications: Additional Information: This Semikron diode, with its […]
Fuji 1MBI300N-120 IGBT module: Features: Applications: Maximum Ratings and Characteristics:
January 12, 2024 — Renesas Electronics announced on January 11 that it has reached a final agreement to acquire Transphorm, Inc., a global leader in robust gallium nitride (“GaN”) power semiconductors. The transaction values Transphorm at approximately $339 million. The acquisition will provide Renesas with in-house GaN technology, a key next-generation material for power semiconductors, […]