The Fuji 2MBI600VE-120 is an IGBT (Insulated Gate Bipolar Transistor) module with specific features and capabilities designed for various power electronic applications.
Key Features:
- High-Speed Switching: The module is optimized for high-speed switching operations, reducing switching losses and improving overall efficiency.
- Voltage Drive: It features voltage drive capabilities for effective control of the IGBT switching process.
- Low Inductance Module Structure: The module is constructed with a low inductance structure, which enhances its performance in fast switching applications.
Applications:
- Inverter for Motor Drive
- AC and DC Servo Drive Amplifier
- Uninterruptible Power Supply (UPS)
- Industrial Machines, including Welding Machines
Maximum Ratings and Characteristics (Tc=25°C unless specified):
- Collector-Emitter Voltage (Vces): 1200V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (Ic): 600A (Continuous), 1200A (Pulse)
- Collector Power Dissipation (Pc): 4800W
- Collector-Emitter Voltage (VCES): 2500V
- Junction Temperature (Tj): 175°C (Maximum)
- Operating Junction Temperature (Tj): Up to +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Screw Torque: 6.0 N·m
The Fuji 2MBI600VE-120 IGBT module is designed to handle high-power applications such as motor drives, amplifiers, power supplies, and industrial machines. Its high-speed switching capability, voltage drive features, and robust construction make it suitable for demanding environments where efficient power conversion and control are essential.