Fuji 6R1TI30Y-080 In-Stock

#6R1TI30Y-080 Fuji 6R1TI30Y-080 New Fuji IGBT Diode and tyristor module 800V 30A , 6R1TI30Y-080 pictures, 6R1TI30Y-080 price, #6R1TI30Y-080 supplier
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https://www.slw-ele.com/6r1ti30y-080.html

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Features
. Glass Passivation Chip
. Easy Connection
. Insulated Type
. Large di/dt
. Large dv/dt
Applications
. dinamic braking of AC Motors
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:800V
Gate-Emitter voltage VGES:±20V
Collector current IC:30A
Collector current Icp:60A
Collector power dissipation Pc:1270W
Collector-Emitter voltage VCES:2000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.0~3.0 *2 N·m
Recommendable value 1.3~1.7 *1 N.m