The FUJI 7MBI40N-120 is a power module that consists of seven insulated-gate bipolar Transistor (IGBT) chips connected in parallel configuration. It is capable of handling a maximum collector-emitter voltage of 1200V and a maximum collector current of 40A.
The FUJI 7MBI40N-120 module is commonly used in high-power applications such as motor drives, power supplies, and welding equipment. It features a 62mm-wide, flat-base package type.
Key Features of the FUJI 7MBI40N-120 include:
Including Brake Chopper: The module incorporates a brake chopper function.
Square RBSOA: It has a square-shaped reverse bias safe operating area.
Low Saturation voltage: The module exhibits low saturation voltage during operation.
Overcurrent Limiting Function: It has an overcurrent limiting function that can handle 4 to 5 times the rated current.
Here are the maximum ratings and characteristics of the module (assuming a temperature of 25°C, unless otherwise specified):
Collector-Emitter Voltage (Vces): 1200V
Gate-Emitter Voltage (VGES): ±20V
Collector Current (IC): 40A
Collector Current-Peak (Icp): 80A
Collector Power Dissipation (Pc): 320W
Collector-Emitter Voltage (VCES): 2500V
Operating Junction Temperature (Tj): +150°C
Storage Temperature (Tstg): -40°C to +125°C
Mounting Screw Torque: 3.5*1 N·m