Infineon BSM10GD120DN2 IGBT Module Specifications:
- Product Category: IGBT Modules
- Brand: Infineon Technologies
- Configuration: Hex
- Package/Case: EconoPACK 2
- Mounting Style: Screw
Electrical Specifications:
- Collector-Emitter Voltage (VCEO) Max: 1200 V
- Collector-Emitter Saturation Voltage: 2.7 V
- Continuous Collector Current at 25°C: 15 A
- Gate-Emitter Leakage Current: 120 nA
- Maximum Gate Emitter Voltage: +/- 20 V
Performance and Thermal Characteristics:
- Power Dissipation (Pd): 80 W
- Maximum Operating Temperature: +150°C
- Minimum Operating Temperature: -40°C
Packaging and Quantity:
- Packaging: Bulk
- Factory Pack Quantity: 10