Infineon’s DD260N18KHPSA1 IGBT Module boasts a range of cutting-edge features designed to ensure high reliability and optimal performance. Leveraging Pressure Contact Technology, this module excels in robustness. The implementation of Advanced Medium Power Technology (AMPT) further enhances its capabilities, making it a reliable choice in various industrial applications. The module adheres to industrial standards and is housed in a package that meets these specifications.
Key Features:
- Utilizes Pressure Contact Technology for enhanced reliability.
- Incorporates Advanced Medium Power Technology (AMPT) for superior performance.
- Conforms to industrial standards, ensuring compatibility.
- Electrically insulated base plate for added safety.
Maximum Ratings and Characteristics:
- Collector-Emitter Voltage (Vces): 1800V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (Ic): 260A
- Collector Current Peak (Icp): 410A
- Collector Power Dissipation (Pc): 164W
- Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- M5 screw torque for mounting: 6.0 N·m