The Infineon FP40R12KT3 is a high-power IGBT (Insulated Gate Bipolar Transistor) module with specific characteristics and applications. Here are the key specifications and details about this module:
- Manufacturer: Infineon
- Product Category: IGBT Modules
- RoHS: YES (Compliant with the Restriction of Hazardous Substances Directive)
- Product: IGBT Silicon Modules
- Configuration: Hex (This likely refers to the module containing six IGBTs.)
- Collector-Emitter Voltage (VCEO) Max: 1200V (Maximum voltage the module can handle)
- Continuous Collector Current at 25°C: 55A (Continuous current-carrying capacity under specified conditions)
- Maximum Operating Temperature: +125°C (Maximum allowable temperature for safe operation)
- Package/Case: Econo 2 (This indicates the type of package or housing used for the module.)
- Packaging: Tray (How the modules are packaged for shipping and handling)
- Brand: Infineon Technologies
- Maximum Gate Emitter Voltage: +/- 20V (Maximum voltage applied between the gate and emitter)
- Minimum Operating Temperature: -40°C (Minimum allowable temperature for safe operation)
- Mounting Style: Screw (How the module is typically mounted or attached)
- Factory Pack Quantity: 10 (How many modules are included in a factory pack)
The FP40R12KT3 is designed for high-power applications and features a half-bridge configuration, which consists of two IGBTs. This configuration is commonly used in motor drives, renewable energy systems (such as inverters for solar and wind power), welding equipment, and other industrial and automotive applications where efficient switching and high current and voltage handling capabilities are required.