Infineon FP75R07N2E4 IGBT Module
FP75R07N2E4 IGBT Module Technical Overview
The FP75R07N2E4 IGBT Module is configured for applications that demand efficient and robust power switching. This module provides notable electrical and mechanical characteristics suitable for motor drives and other industrial uses.
Technical Parameters
| Collector-Emitter Voltage (VCES) | 650 V |
| Continuous Collector Current (IC) | 75 A |
| Pulsed Collector Current (ICRM, 1ms) | 150 A |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Collector Power Dissipation (PC) | 950 W |
| Operating Junction Temperature (Tvj op) | up to 150°C |
Electric and Structural Features
The FP75R07N2E4 integrates Trench IGBT 4 technology. This architecture improves short-circuit strength and supports a positive temperature coefficient of the collector-emitter saturation voltage (VCEsat), which facilitates parallel operation among multiple modules.
- Increased blocking voltage up to 650V
- Short-circuit current handling
- Integrated NTC temperature sensor
- Base plate is copper with full electrical isolation
- Connection via soldercontact technology
Typical Applications
Common deployment of the FP75R07N2E4 module includes variable-frequency motor drives and inverter circuits. The module’s high current rating and block voltage threshold support demanding switching applications.
For further reference and datasheet details, visit the FP75R07N2E4 product page.