The Infineon FP75R12KT4_B15 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies AG. Here are some details about this specific module:
Manufacturer Part Number: FP75R12KT4_B15
Package Description: MODULE-27
Manufacturer: Infineon
Case Connection: ISOLATED
Collector Current-Max (IC): 75 A
Collector-Emitter voltage-Max: 1200 V
Configuration: SINGLE
JESD-30 Code: R-XUFM-X27
Number of Elements: 1
Number of Terminals: 27
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 160 ns
Turn-on Time-Nom (ton): 80 ns
The FP75R12KT4_B15 IGBT module is designed for high-power applications. It has a maximum collector current (IC) rating of 75 A and a maximum collector-emitter voltage (VCE) rating of 1200 V. The module is configured as a single IGBT element.
The package style is a flange mount with 27 terminals, and it has an isolated case connection. The module features N-channel polarity/channel type, indicating it is an N-channel IGBT. The transistor element material is silicon, which is commonly used in power Semiconductor devices.
The turn-off time (toff) is approximately 160 ns, while the turn-on time (ton) is approximately 80 ns. These values indicate the switching speed of the module.