Infineon FS450R17KE3: Technical Analysis and Application Guide for the 1700V 450A Sixpack IGBT Module
Infineon FS450R17KE3 IGBT Module | 1700V 450A Sixpack
Technical Introduction and Core Highlights
The Infineon FS450R17KE3 is a high-performance sixpack IGBT module engineered for megawatt-range power conversion, utilizing Trenchstop™ IGBT3 and EmCon3 diode technologies. This module provides a robust solution for engineers seeking to optimize power density in 1700V class applications without compromising on thermal stability. By integrating a three-phase bridge configuration into the industry-standard EconoPACK™+ package, the FS450R17KE3 reduces parasitic inductance and simplifies system-level assembly.
- Core Specifications: 1700V | 450A | $V_{CE(sat)}$ 2.00V (typical)
- Key Advantages: Enhanced short-circuit ruggedness and an integrated NTC thermistor for real-time junction temperature monitoring.
- Design Intent: Engineers often ask how to maintain efficiency in 690V AC line systems; this module answers that with optimized switching losses and high-voltage isolation.
Download Official FS450R17KE3 Datasheet (PDF)
Technical Analysis of the FS450R17KE3 UVP
The primary value of the FS450R17KE3 lies in its Trenchstop™ IGBT3 architecture. Unlike traditional planar structures, the trench gate design significantly reduces the collector-emitter saturation voltage ($V_{CE(sat)}$), which directly correlates to lower conduction losses. In high-power power semiconductors, even a minor reduction in $V_{CE(sat)}$ can prevent massive heat buildup during continuous operation. The inclusion of the EmCon3 (Emitter Controlled) diode ensures a soft recovery characteristic, which is vital for minimizing Electromagnetic Interference (EMI) during high-speed switching.
Thermal management is another critical pillar of this module’s design. The FS450R17KE3 features a copper baseplate that facilitates efficient heat transfer to the cooling system. You can imagine the module’s thermal resistance ($R_{thJC}$) as the diameter of a drainage pipe; a lower resistance value acts like a wider pipe, allowing heat “water” to flow away from the silicon junctions faster. This prevents the “flooding” of the junction with excess heat, which is the leading cause of thermal runaway. For a deeper understanding of these curves, engineers should consult our guide on mastering IGBT thermal design and Zth curves.

Furthermore, the FS450R17KE3 is built to withstand short-circuit conditions for up to 10 microseconds at 125°C. This robustness is achieved through the Fieldstop layer, which controls the electric field distribution within the chip. This design allows for a higher safety margin in industrial environments where grid instability or mechanical load faults can trigger sudden overcurrent events. To protect against long-term degradation, the internal chips are encapsulated in high-grade silicone gel, which provides critical insulation and moisture protection.
Optimized Application Scenarios
- Industrial Motor Drives: Ideal for 690V AC drives where the 1700V rating provides the necessary voltage overhead to handle regenerative braking energy.
- Wind Turbine Converters: The FS450R17KE3 handles the variable frequencies and high current demands of wind energy conversion with high reliability.
- Solar Central Inverters: High efficiency at the 1700V level allows for increased DC bus voltages, reducing overall system current and cabling costs.
- Uninterruptible Power Supplies (UPS): Provides the high-current switching capacity required for large-scale data center backup systems.
Best Match: The FS450R17KE3 is best suited for high-voltage industrial inverters requiring compact three-phase integration and precision temperature telemetry via integrated NTC.

Key Specifications Table
| Category | Parameter | Value (Typ/Max) |
|---|---|---|
| Absolute Maximum Ratings | Collector-Emitter Voltage ($V_{CES}$) | 1700 V |
| Continuous DC Collector Current ($I_C$) | 450 A (@ $T_C = 80^circ C$) | |
| Repetitive Peak Collector Current ($I_{CRM}$) | 900 A | |
| Electrical Characteristics | VCE Saturation Voltage ($V_{CE sat}$) | 2.00 V (typ) / 2.45 V (max) |
| Gate Threshold Voltage ($V_{GE(th)}$) | 5.2 V (min) – 6.4 V (max) | |
| Total Gate Charge ($Q_G$) | 5.30 µC | |
| Thermal & Mechanical | Thermal Resistance (IGBT, $R_{thJC}$) | 0.035 K/W (per IGBT) |
| Operating Junction Temperature ($T_{vj}$) | -40°C to +125°C |
Engineer FAQ
Q1: What is the recommended gate resistor ($R_G$) for the FS450R17KE3?
The datasheet specifies test values of $R_{G on} = 3.3 Omega$ and $R_{G off} = 3.3 Omega$. However, engineers should tune these values based on their specific busbar inductance to balance switching speed against voltage overshoot.
Q2: Can this module be used in 690V line voltage applications?
Yes. With a $V_{CES}$ of 1700V, the FS450R17KE3 is designed specifically for 690V AC systems, providing sufficient margin for the DC link voltage (typically around 1100V) and transient spikes during switching.
Q3: How accurate is the integrated NTC thermistor for protection?
The integrated NTC has a resistance of $5 kOmega$ at 25°C with a B-value of 3375K. While excellent for monitoring trends and steady-state temperatures, engineers should account for the thermal time constant between the IGBT junction and the NTC’s physical location during fast overload conditions.
Q4: What are the torque requirements for the main power terminals?
Proper mechanical installation is critical. The FS450R17KE3 requires a mounting torque of 3.0 to 6.0 Nm for the power terminals (M6) and 3.0 to 6.0 Nm for the heatsink mounting (M5) to ensure optimal thermal contact and electrical connectivity.
The Infineon FS450R17KE3 empowers system designers to build resilient, high-density power stages for the most demanding industrial environments. By leveraging the advanced Trenchstop™ IGBT3 technology and the thermal efficiency of the EconoPACK™+ package, this module serves as a reliable cornerstone for modern 1700V power conversion strategies.