IR IRG4BC40SPBF In-Stock

#IRG4BC40SPBF IR IRG4BC40SPBF New Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN, IRG4BC40SPBF pictures, IRG4BC40SPBF price, #IRG4BC40SPBF supplier
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Manufacturer Part Number: IRG4BC40SPBF
Rohs Code: Yes
Part Life Cycle Code: Not Recommended
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Package Description: FLANGE MOUNT, R-PSFM-T3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 6.97
Case Connection: COLLECTOR
Collector Current-Max (IC): 60 A
Collector-Emitter voltage-Max: 600 V
Configuration: SINGLE
Fall Time-Max (tf): 570 ns
Gate-Emitter Thr voltage-Max: 6 V
Gate-Emitter voltage-Max: 20 V
JEDEC-95 Code: TO-220AB
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 160 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN