IXYS MCC162-18io1 IGBT Module

IXYS MCC162-18io1 IGBT Module

In the fast-paced realm of high-power industrial applications, the IXYS MCC162-18io1 power module emerges as a technological powerhouse. Specifically crafted for robust performance, this module comprises two IGBT modules arranged in a half-bridge configuration, each boasting an impressive rating of 900V and 162A.

Integrated Intelligence and Protection: At its core, the MCC162-18io1 module encapsulates an integrated gate driver circuit, elevating operational efficiency. Enhanced protection features, including over-current and over-temperature safeguards, fortify the module’s reliability, ensuring a resilient performance under demanding conditions.

Versatile Integration: Designed with versatility in mind, the MCC162-18io1 seamlessly integrates into diverse applications such as motor control, Uninterruptible Power Supplies (UPS), and welding equipment. Its compact form factor coupled with remarkable power density renders it a top choice for applications where spatial constraints are a critical consideration.

Key Features and Advantages:

  • Thyristor for line frequency optimization
  • Planar passivated chip for advanced performance
  • Long-term stability ensuring consistent functionality
  • Direct Copper Bonded Al2O3-ceramic construction for durability
  • Y4 Package for industry-standard compatibility
  • RoHS compliant, aligning with environmental standards

Applications:

  • Line rectification for 50/60 Hz systems
  • AC motor control with soft start functionality
  • Precise DC motor control
  • Power converters for efficient energy management
  • AC power control with precision
  • Illumination and temperature control systems

Package Highlights:

  • Isolation Voltage: V~
  • Industry-standard outline for easy integration
  • Soldering pins for secure PCB mounting
  • DCB ceramic base plate for optimized heat dissipation
  • Reduced weight for enhanced portability
  • Advanced power cycling capabilities

Absolute Maximum Ratings (Tc=25°C unless otherwise specified):

  • Max. non-repetitive reverse/forward blocking voltage (VRSM/DSM): 1900V
  • Max. repetitive reverse/forward blocking voltage (VRRM/DRM): 1800V
  • Average forward current (ITAV) at Tc=85 °C: 180A
  • IRMS forward current (180°C sine IT(RMS)): 300A
  • Max. gate power dissipation (tp=30μs, Tc=125 °C): 120W
  • Virtual junction temperature (TVJ): -40 ~ 125 °C
  • Storage temperature (Tstg): -40 ~ 125 °C
  • Mounting torque (Mc): 2.25~2.75 Nm
  • Isolation voltage (1 minute, 50/60 Hz, RMS Visol): 3600V

Stay tuned for a deeper dive into the transformative potential of the MCC162-18io1 power module in our upcoming feature article.