The describe the features, applications, and advantages of an IGBT (Insulated Gate Bipolar Transistor) module, with additional specifications related to its voltage and current ratings. Here’s a summarized breakdown of the key information:
Features:
International standard package
Direct copper-bonded Al2O3-ceramic with a copper base plate
Planar passivated chips
Isolation voltage: 3600 V~
UL registered E 72873
Keyed gate/cathode twin pins
Applications:
Motor control, soft starter
Power converter
Heat and temperature control for industrial furnaces and chemical processes
Lighting control
Solid-state switches
Advantages:
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
Specifications:
VRSm: 1700V (Reverse Voltage, non-repetitive)
Vrrm: 1600V (Reverse Voltage, repetitive)
ITAVM, IFAVMTC: 520A (Mean forward current at TC = 85°C), 180°C sine
IFAVM: 320A (Mean forward current at TC = 25°C), 180°C sine
Weight: 750g (Typical)
The isolation voltage of 3600 V~ indicates the maximum voltage that can be safely applied between the module’s input (gate/cathode) and the output (collector/emitter) without any electrical conduction.
The voltage specifications VRSm and Vrrm represent the maximum non-repetitive and repetitive reverse voltage ratings, respectively, which indicate the maximum reverse voltage the module can withstand without breaking down.
The current specifications ITAVM and IFAVMTC represent the mean forward current at different temperatures (TC = 85°C and TC = 25°C, respectively) for a sinusoidal input waveform.