The IXYS VUO50-08NO3 is an IGBT (Insulated Gate Bipolar Transistor) module with specific features and applications. Here are some key details about this module:
Features:
- Packaging: The module is packaged with a DCB (Direct Copper Bonded) ceramic base plate.
- Isolation Voltage: It offers an isolation voltage of 3600V~, which is important for safety and preventing electrical interference.
- Planar Passivated Chips: The module features planar passivated chips with a blocking voltage of up to 1800V.
- Low Forward Voltage Drop: This indicates that it has low conduction losses when current flows through it.
Applications:
- Supplies for DC Power Equipment: It can be used in power supplies for various DC-powered devices.
- Input Rectifiers for PWM Inverter: Used in applications where PWM (Pulse Width Modulation) inverters are employed.
- Battery DC Power Supplies: Suitable for battery-based DC power supply systems.
- Rectifier for DC Motors Field Current: Used in controlling the field current of DC motors.
Advantages:
- Easy Mounting: It can be easily mounted with two screws, which simplifies installation.
- Space and Weight Savings: Its design allows for space and weight savings compared to some other power modules.
- Improved Temperature and Power Cycling: It is designed to withstand temperature variations and power cycling.
Absolute Maximum Ratings (Tc=25°C unless otherwise specified):
- Collector-Emitter Voltage (Vces): 900V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Power Dissipation (Pc): 1160W
- Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting M5 Screw Torque: 2.5~3.5 N·m
- Weight (Typical): 50g
- Continuous Collector Current (Idav) at TC=85°C: 58A