MUBW35-12A7 Video
vendere MUBW35-12A7, IXYS MUBW35-12A7 New Stock, MUBW35-12A7 Insulae Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; #MUBW35_12A7
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IXYS MUBW35-12A7 est a imperium moduli diode in variis applicationibus industriae adhibitis ut glutino & altilium notatione disposito.
Specificationes electricae:
Maximum mediocris Vestibulum Current: XXXV A *
Repetita Pecco inversa voltage: V 1200
Maxime Surge Current: D A
Maximum Voltage Rorate: 1.85 V ad 35 A
Maximum inversa Recuperatio Tempus: 200 ns
Maxime inversa Recuperatio Current: XXX A
Mechanica Specifications:
Weight: g 130
Module Type: Standard Diode
Sarcina Style: MiniBLOC
Adscendens Style: stupra
Adscendens Torque: 3.5 Nm
Temperature operating: -40 ad CXX ° C
Hoc MUBW35-12A7 IGBT modulus designatur magna potentia densitatis, humilis profile, & altum aestus vena capacitatis. Eius involucrum MiniBLOC stylum facilem inaugurare et reficere, dum cochleae inscensio eius stylum securum ac firmum inscensum efficit.