vendere PS21265-AP, #Mitsubishi #PS21265-AP New Stock, INTEGRATA POTESTAS MUNIA 600V/20A humilis damnum 5th generation IGBT invertitur pons trium temporum DC-ad-AC conversio potentiae, #IGBT_Module, #IGBT, #PS21265_AP
Email: sales@shunlongwei.com
INTEGRATED GESTATIO, PRAESIDIUM ac ratio MAGISTERIUM functiones
• Nam crus superius IGBTS : Coegi circuit: High voltage summus velocitatis gradus shifting, Control copiam sub-voltage (UV) protectionem.
• pro inferioribus crus IGBTs : Drive circuit, control supply under-voltage protection (UV), Brevis circuitus praesidium (SC).
• Culpa significat: Respondens culpa SC (inferiorem-partem IGBT) vel UV culpa (inferioris copia).
• Input interface : 3, 5V linea compatibilis. (High Active)
Copia intentionis applicatae inter PN VCC 450V
Supple intentione (surge) applicata inter PN VCC(surge) 500V
Collector-emissa intentione VCES 600V
Singulis IGBT collector current TC = 25°C IC 20A
Quisque IGBT collector current (apicem) TC = 25°C, minor 1ms ICP 40A
Collector dissipationis TC = 25°C, per 1 chip PC 51.2W
Coniunctio temperatus Tj -20~+125°C
VCC(PROT) 400V
Module causa operationis temperatus Tc -20~ + C°C
Repono temperatus Tstg -40~+125 °C
Solitudo intentionis 60Hz, Sinusoidalis, AC 1 minuti, acus connectens laminam viso-demersam ad calefactionem 2500V
Adscendens stupra : M4 0.98~ 1.47 Nm
pondus 54g