Tokyo-Toshiba electronic Devices & at Corporation ("Toshiba") induxit "MG800FXF2YMS3," carbide pii (SiC) mosfet Module integrating nuper developed alveum suum Sic MOSFET chippis cum aestimatione 3300V et 800A, ad applicationes industriales. Volumen productionis mense Maio 2021 incipiet.
Ut canalis temperatus 175°C efficiatur, novum productum iXPLV adhibet (intelligent fleXevanescit: Package Low Voltage) sarcina cum argento sintering compagem internum Technology et alta compatibilitas ascendens Novus modulus necessariis occurrit pro summus efficientiae, instrumenti compacti ad applicationes industriales sicut converters et inverters pro vehiculis ferriviariis, et renovabilis energiae systematis generationis.
Applications
- Inverters et converters ad ferriviaria vehiculis
- Renovabilis navitas systemata generationis potentiae
- Motricium industrialis imperium apparatu
Features
- Exhaurire-source voltage rating : VDSS3300v =
- Exhaurire current ratings: ID= 800A Dual
- Alveus alveus temperatus range : Tch= 175°C
- Minimum damnum :
Eon= 250mJ (typ.)
Eoff= 240mJ (typ.)
VDS (in) sensu= 1.6V (typ.) - Humilis inductione errant : Ls= 12nH (typ.)
- Magna potentia densitas parva sarcina iXPLV