Vishay Siliconix SI3983DV-T1-E3 In-Stock

#SI3983DV-T1-E3 Vishay Siliconix SI3983DV-T1-E3 New SI3983DV-T1-E3 Signum parvum Field-Effectus Gallium, 2.1A I (D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Gallium FET, ROHS OBSEQUENS, TSOP-6; SI3983DV-T1-E3 , SI3983DV-T1-E3 pictures, SI3983DV-T1-E3 pretium, #SI3983DV-T1-E3 elit
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Manufacturer Part Number: SI3983DV-T1-E3
Rohs Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: VISHAY SILICONIX
Pars Package Code: TSOP
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G6
Pin Count: V
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.8
Configurationis: SEPARATUS, 2 elementa inaedificata in Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 2.1 A
Exhaurire-fonte Resistentia-Max: 0.11 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PDSO-G6
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: P-CHNAL
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio Perago: Matte TIN
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Small Signum Campi-Effectus Transistor, 2.1AI(D), 20V, 2-Element, P-Channel, Silicon, oxydatum Metallum. Gallium FET, ROHS OBEDIENS, TSOP-6