Datasheets:APT70GR120(B2,L)Standard Package:25Category:Discrete Semiconductor ProductsFamily:IGBTs – SingleSeries:-Packaging:TubeIGBT Type:NPTVoltage – Collector Emitter Breakdown (Max):1200VVce(on) (Max) @ Vge, IC:3.2V @ 15V, 70ACurrent – Collector (IC) (Max):160ACurrent – Collector Pulsed (Icm):280APower – Max:961WSwitching Energy:3.82mJ (on), 2.58mJ (off)Input Type:StandardGate Charge:544nCTd (on/off) @ 25°C:33ns/278nsTest Condition:600V, 70A, 4.3 Ohm, 15VReverse Recovery Time (trr):-Package / Case:TO-264-3, TO-264AAMounting Type:Through HoleSupplier Device Package:TO-264Dynamic Catalog:Standard IGBTs #APT70GR120L Microsemi Power Products Group APT70GR120L New Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, APT70GR120L pictures, APT70GR120L price, #APT70GR120L supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Part Number: APT70GR120L
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: MICROSEMI CORP
Manufacturer: Microsemi Corporation
Risk Rank: 2.16
Collector Current-Max (IC): 160 A
Collector-Emitter voltage-Max: 1200 V
Gate-Emitter Thr voltage-Max: 6.5 V
Gate-Emitter voltage-Max: 30 V
Operating Temperature-Max: 150 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 961 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: MICROSEMI CORP
Manufacturer: Microsemi Corporation
Risk Rank: 2.16
Collector Current-Max (IC): 160 A
Collector-Emitter voltage-Max: 1200 V
Gate-Emitter Thr voltage-Max: 6.5 V
Gate-Emitter voltage-Max: 30 V
Operating Temperature-Max: 150 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 961 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel