Mitsubishi CM150DY-24A IGBT Module


Mitsubishi CM150DY-24A IGBT Module: Empowering Switching Applications

Discover the Mitsubishi CM150DY-24A IGBT Module, a dynamic 1200V Dual IGBTMOD™ A-series Module engineered to revolutionize switching applications. This module encompasses two IGBT transistors configured in a half-bridge setup, each equipped with a reverse-connected super-fast recovery free-wheel diode. It introduces advanced features while ensuring simplified assembly and superior thermal management.

Key Features:

  • Efficient Drive Power: The module’s low drive power requirement ensures optimal energy usage.
  • Low VCE (sat): Benefit from reduced saturation voltage for enhanced efficiency.
  • Super-Fast Recovery Free-Wheel Diode: Discrete diodes contribute to efficient energy flow.
  • Isolated Baseplate: Simplifies assembly and heat dissipation, enhancing overall thermal management.
  • Gate-Emitter Voltage (C-E Short): ±20V – Facilitates precise control.

Powerful Performance:

  • Peak Collector Current: 150A – Handle substantial current loads with ease.
  • Emitter Current DC Collector Current: 150A – Ensures steady current flow for consistent performance.

Versatile Applications:

  • Motor Drive & Control: Elevate motor control precision and efficiency.
  • Power Management: Efficiently manage power flows with advanced technology.

Specifications at a Glance:

  • Transistor Polarity: N Channel
  • Collector Emitter Voltage (Vces): 1.2kV
  • Power Dissipation (Pd): 960W
  • Collector Emitter Voltage (V(br)ceo): 1.2kV
  • Transistor Case Style: Module
  • No. of Pins: 7
  • Operating Temperature Max: 150°C
  • Operating Temperature Min: -40°C

Revolutionizing Power Control:

The Mitsubishi CM150DY-24A IGBT Module redefines power control with its advanced configuration and cutting-edge features. It’s designed to excel in switching applications, offering exceptional performance and precise thermal management.