The Mitsubishi QM150DY-24 is a Power Bipolar Transistor module with specific features and specifications. Here is some information about this module:
- Manufacturer Part Number: QM150DY-24
- Package Description: FLANGE MOUNT, R-PUFM-X15
- This module is mounted using a flange and is designated by the package code “R-PUFM-X15.”
- Manufacturer: Mitsubishi Electric
- Collector Current-Max (IC): 150 A
- This is the maximum collector current that this module can handle.
- Configuration: COMPLEX
- The module has a complex configuration, indicating that it may consist of multiple components or transistor elements.
- DC Current Gain-Min (hFE): 75
- This is the minimum DC current gain for the module.
- Fall Time-Max (tf): 3000 ns
- Fall time represents the time it takes for the transistor to switch from its ON state to the OFF state, and this module has a maximum fall time of 3000 nanoseconds.
- JESD-30 Code: R-PUFM-X15
- JESD-30 is an industry standard that provides codes for various package types. This module’s package type is specified as “R-PUFM-X15.”
- Number of Elements: 2
- This module contains two transistor elements.
- Number of Terminals: 15
- It has a total of 15 terminals for electrical connections.
- Operating Temperature-Max: 150 °C
- The maximum allowable operating temperature for this module is 150 degrees Celsius.
- Package Body Material: PLASTIC/EPOXY
- The module’s package body is made of plastic/epoxy material.
- Package Shape: RECTANGULAR
- The package has a rectangular shape.
- Package Style: FLANGE MOUNT
- The module is designed to be flange-mounted.
- Polarity/Channel Type: NPN
- This module features NPN (Negative-Positive-Negative) transistors.
- Power Dissipation-Max (Abs): 1000 W
- The maximum power dissipation of the module is 1000 watts (1 kW).
- Qualification Status: Not Qualified
- This module is not specified as qualified, which may have implications for certain applications.
- Subcategory: BIP General Purpose Power
- It falls under the subcategory of general-purpose power bipolar transistors.
- Surface Mount: NO
- This module is not designed for surface mounting.
- Terminal Form: UNSPECIFIED
- The terminal form is unspecified.
- Terminal Position: UPPER
- The terminals are positioned in the upper part of the module.
- Transistor Element Material: SILICON
- The transistor elements in this module are made of silicon.
- VCEsat-Max: 3 V
- The maximum collector-emitter saturation voltage is 3 volts.