The Semikron SKiip 83AC121SMT10 is an IGBT (Insulated Gate Bipolar Transistor) module designed for use in 3-phase bridge inverter applications.
Maximum Ratings and Characteristics:
- Collector-Emitter Voltage (Vces): 1200V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (Ic): 85A
- Collector Current (Peak, Icp): 170A
- Collector Power Dissipation (Pc): 1270W
- Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Screw Torque: 3.5 N·m (Newton-meters)
This IGBT module is specifically designed for 3-phase bridge inverter applications, where it can switch high currents and voltages. It has a maximum collector-emitter voltage of 1200V and can handle a continuous collector current of 85A with a peak current rating of 170A. The module can dissipate up to 1270W of power. It is important to operate the module within the specified temperature range and adhere to the recommended mounting screw torque for proper installation.