The STARPOWER GD50PIY120C5SN is an IGBT (Insulated Gate Bipolar Transistor) power module designed by STARPOWER. It is intended for applications that require low conduction loss, short circuit ruggedness, and high reliability. Here’s a summary of its features, applications, and specifications:
General Description: The STARPOWER GD50PIY120C5SN IGBT Power Module is designed to provide minimal conduction loss and high resistance to short circuits. It is suitable for various applications, including general inverters and uninterruptible power supplies (UPS).
Features:
- Low VCE(sat) Trench IGBT Technology: Utilizes IGBT technology with low saturation voltage.
- 10μs Short Circuit Capability: Capable of withstanding short circuits for up to 10 microseconds.
- VCE(sat) with Positive Temperature Coefficient: The saturation voltage has a positive temperature coefficient.
- Maximum Junction Temperature: Can handle a maximum junction temperature of 175°C.
- Low Inductance Case: Designed with a low inductance case for improved performance.
- Fast & Soft Reverse Recovery Anti-parallel FWD: Incorporates fast and soft reverse recovery anti-parallel free-wheeling diode.
- Isolated Copper Baseplate Using DBC Technology: Utilizes Direct Bonded Copper (DBC) technology for isolated baseplate.
Typical Applications:
- Inverter for Motor Drive: Suitable for motor drive inverters.
- AC and DC Servo Drive Amplifier: Used in servo drive amplifiers for both AC and DC applications.
- Uninterruptible Power Supply (UPS): Designed for UPS systems.
Absolute Maximum Ratings (Tc=25°C unless otherwise noted):
- Collector-Emitter Voltage (Vces): 1200V
- Gate-Emitter Voltage (VGES): ±20V
- Continuous Collector Current (Ic): 50A (Tc=100°C)
- Pulsed Collector Current (Icm): 100A (1ms)
- Maximum Power Dissipation (PD): 292W (Tj=175°C)
- Isolation Voltage RMS: 2500V (f=50Hz, t=1min)
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Screw Torque: M5 3.0~6.0 N·m
- Weight of Module: 200g