The Fuji 6MBI450U-170 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fuji Electric Corp. of America. This module has been discontinued and offers specifications suitable for power control applications. Here are the details based on the provided information: Unfortunately, the link provided in URL [1] couldn’t be parsed for additional information. However, the […]
The Infineon FZ1600R17HP4-B2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. This module is part of the IHM B-Series and offers impressive specifications suitable for various industry applications. It features a single switch design with a focus on efficiency and reliability. Here are the key details about the Infineon FZ1600R17HP4-B2 […]
It seems to be an insulated gate bipolar transistor (IGBT) module used in power electronic applications.Repetitive Peak Reverse Voltage (VRRM): 1600 V – The maximum voltage that can be applied in the reverse direction in a repetitive manner.Non-Repetitive Peak Reverse Voltage (VRSM): 1700 V – The maximum voltage that can be applied in the reverse […]
the Infineon FF300R17KE3 IGBT module. It is indeed a high-power and high-frequency module suitable for various industrial power electronics applications.The module is high voltage and current ratings, along with its ability to operate at high frequencies, make it well suited for demanding power switching tasks.To summarize the key specifications:Model Number: FF300R17KE3Voltage Rating: 1700V (volts)Continuous Current […]
The Infineon FZ600R17KE3 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for industrial drives, wind turbines, and large motor control applications. It is a half-bridge module consisting of six IGBTs and six anti-parallel diodes. Key features and specifications of the FZ600R17KE3 module include: Manufacturer: Infineon Product: IGBT Silicon Modules Configuration: Dual Collector-Emitter voltage […]
FUJI 1MBI2400U4D-170 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module that offers excellent switching capabilities and is suitable for various applications. Key Features: Applications: Maximum Ratings and Characteristics:
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July 10, 2023 /SemiMedia/ — STMicroelectronics recently introduced the first galvanically isolated gate driver for gallium nitride (GaN) transistors, the STGAP2GS, which reduces size and bill-of-materials in applications requiring excellent wide-bandgap efficiency combined with robust safety and electrical protection . The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V […]
“When it comes to isolated drivers, many hardware R&D engineers will think of optocouplers. But is optocoupler really the only option? With the trend of global electrification and digitization, the development of power Electronic technology is also changing with each passing day: the switching frequency of power devices is further increased, the use of wide-bandgap […]