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The MG15N6ES42 is a power Semiconductor device commonly used in high-power switching applications and motor control applications. It is designed with several notable features:
- Electrode Isolation: The electrodes of the device are isolated from the case, ensuring electrical separation and preventing any potential short circuits.
- Integration: The device incorporates six IGBTs (Insulated Gate Bipolar Transistors) into a single package. This integration allows for compact and efficient power control.
- Enhancement-Mode: The IGBTs in the package operate in enhancement mode, meaning they require a positive voltage at the gate terminal to turn on and conduct current.
- Low Saturation voltage: The device has a low saturation voltage of VCE-4V, minimizing power losses and improving efficiency.
- Voltage Ratings: The collector-emitter voltage (Vces) is specified as 1200V, indicating the maximum voltage the device can withstand in operation. The gate-emitter voltage (Vges) has a range of ±20V.
- Current Ratings: The device has a collector current (IC) rating of 15A-30A for DC/1ms and a forward current (If) rating of 15A-30A for DC/1ms. These ratings define the maximum current the device can handle under specified conditions.
- Power Dissipation: The collector power dissipation (Pc) is specified as 125W, indicating the maximum power the device can safely dissipate without exceeding its thermal limits.
- Temperature: The junction temperature (Tj) is specified as 150°C, indicating the maximum temperature at which the device can operate safely. The storage temperature range (Tstg) is from -40°C to 125°C.
- Isolation Voltage: The device has an isolation voltage (VIso1) of 2500V, ensuring electrical isolation between different components or circuits.
- Screw Torque: The recommended screw torque for the device is 3 N.m, providing guidance for secure and reliable mounting.