Toshiba MG15Q6ES1 IGBT Module

Toshiba MG15Q6ES1 IGBT Module Features:

1. Collector-Emitter Voltage (Vces): 1200V
   • This is the maximum voltage that can be applied across the collector and emitter terminals of the IGBT.
2. Gate-Emitter Voltage (VGES): ±20V
   • The gate-emitter voltage specifies the voltage range that can be applied to the gate relative to the emitter.
3. Collector Current (Ic): 15A
   • This is the maximum continuous current that can flow through the collector terminal of the IGBT.
4. Collector Current (Icp): 30A
   • This is the maximum peak (non-repetitive) collector current allowed.
5. Collector Power Dissipation (Pc): 145W
   • This is the maximum power that can be dissipated at the collector terminal of the IGBT without exceeding its limits.
6. Collector-Emitter Voltage (VCES): 2500V
   • This is an absolute maximum rating for the collector-emitter voltage. While the device is rated for 1200V, it can withstand up to 2500V, but it’s not recommended to operate it at such high voltages.
7. Operating Junction Temperature (Tj): +150°C
   • The maximum temperature at which the IGBT can operate safely without exceeding its limits.
8. Storage Temperature (Tstg): -40°C to +125°C
   • The temperature range for safe storage of the IGBT when it’s not in operation.
9. Mounting Screw Torque: 6 N·m
   • The specified torque for mounting screws when installing the module.
10. Weight: 185g
    • The weight of the IGBT module.