#MG300Q1US1 Toshiba MG300Q1US1 New 1IGBT: 300A1200V, MG300Q1US1 pictures, MG300Q1US1 price, #MG300Q1US1 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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MG300Q1US1 Description
MG300Q1US1, V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar Transistor. For high power switching and motor control applications
MG300Q1US1 1.10 lbs
Target_Applications
MG300Q1US1 could be used in High Power Switching / Motor Control Applications
Features
N Channel IGBT (High Power Switching / Motor Control Applications)
1IGBT: 300A1200V
Shunlongwei Inspected Every MG300Q1US1 Before Ship, All MG300Q1US1 with 6 months warranty.