#MG50H1BS1 TOSHIBA MG50H1BS1 New Toshiba IGBT: 50A / 500V, MG50H1BS1 pictures, MG50H1BS1 price, #MG50H1BS1 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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MG50H1BS1
Features
· High Input Impedance
.High Speed
. Low saturation voltage: Vce(sat)=5.0V(Max.)
.Enhancement-Mode
.The Electrodes are Isolated from Case.
.High Speed
. Low saturation voltage: Vce(sat)=5.0V(Max.)
.Enhancement-Mode
.The Electrodes are Isolated from Case.
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:500V
Gate-Emitter voltage VGES:±20V
Collector current IC:50A
Collector current Icp:100A
Collector power dissipation Pc:150W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Screw Torque (Termina1 / Mounting) 20/30 kg.cm
Toshiba IGBT: 50A / 500V