- Toshiba MG50J6ES50 IGBT Module Specifications:
- Collector-emitter voltage (VCES): 600 V
- Gate-emitter voltage (VGES): ±20 V
- Collector current DC (IC): 50 A
- Collector current 1ms (ICP): 100 A
- Forward current DC (IF): 50 A
- Forward current 1ms (IFM): 100 A
- Collector power dissipation (PC at Tc = 25°C): 280 W
- Junction temperature (Tj): 150 °C
- Storage temperature range (Tstg): -40 ~ 125 °C
- Isolation voltage (VIsol): 2500 V (AC 1 min.)
- Screw torque (Terminal/mounting): 2/3 N·m
- Functional Features:
- High input impedance.
- 6 IGBTs built into 1 package.
- Enhancement-mode.
- High speed:
- tf (fall time) = 0.30µs (Max.) (IC = 50A)
- trr (reverse recovery time) = 0.15µs (Max.) (IF = 50A)
- Low saturation voltage: VCE (sat) = 2.70V (Max.) (IC = 50A)
- Applications:
- High Power Switching Applications
- Motor Control Applications
- Built-in Protections:
- Overcurrent protection
- Thermal shutdown
- Physical Characteristics:
- Compact, fully isolated package for easy installation and maintenance.
- Product Identification:
- Toshiba MG50J6ES50
- MG series insulated gate bipolar transistor (IGBT) module
Revised Description:
The Toshiba MG50J6ES50 is an advanced high-power switching transistor module designed specifically for power conversion and motor control applications. As part of the MG series, renowned for superior performance and reliability, the MG50J6ES50 boasts a voltage rating of 600V and a current rating of 50A. This module excels in minimizing power loss and enhancing efficiency due to its low on-state voltage drop and fast switching characteristics.
Featuring a compact, fully isolated package, the MG50J6ES50 is designed for seamless installation and maintenance. Its six built-in IGBTs operate in an enhancement mode, ensuring high input impedance and rapid switching. Notably, the module exhibits high-speed performance with a fall time (tf) of 0.30µs (Max.) at 50A and a reverse recovery time (trr) of 0.15µs (Max.) at 50A forward current.