Infineon FS800R07A2E3: 650V, 800A Direct-Cooled Sixpack IGBT Module for EV Traction Inverters
Infineon FS800R07A2E3 Sixpack IGBT Module (650V, 800A)
The Infineon FS800R07A2E3 is an automotive-qualified HybridPACK™ 2 sixpack power module utilizing Trench/Fieldstop Infineon TRENCHSTOP™ IGBT3 and Emitter Controlled diode technology. Engineered with a direct-cooled pin-fin baseplate and low package stray inductance, the FS800R07A2E3 maximizes power density while minimizing conduction losses in 650V switching stages.
- Core Specifications: 650V $V_{CES}$ | 800A continuous $I_C$ | $V_{CE(sat)}$ 1.40V typ. at 800A, 25°C
- Key Advantage: Direct liquid-cooling pin-fin baseplate architecture reduces cooling system mass and thermal resistance.
- Key Advantage: Symmetrical sixpack topology engineered for low internal lead resistance and optimized current sharing.
For engineers resolving how to balance switching losses with thermal boundaries in high-current traction or industrial inverters, the FS800R07A2E3 combines high power density with integrated temperature sensing for real-time monitoring.
Download Official Datasheet Specifications (PDF)
Direct Liquid Cooling and Pin-Fin Baseplate Dynamics
The standout technical characteristic of the FS800R07A2E3 is its integrated pin-fin baseplate designed for direct fluid immersion. In conventional modules, thermal heat transfer encounters multiple mechanical interfaces: silicon to substrate, substrate to baseplate, thermal grease (TIM), and heat sink. Think of this thermal pathway like traffic flow along an expressway: each extra layer creates a congestion bottleneck where thermal resistance increases temperature rise. By eliminating the conventional thermal grease layer entirely and circulating fluid directly against copper pin fins, the FS800R07A2E3 drastically cuts thermal resistance from junction to fluid ($R_{thJF}$), lowering steady-state die temperatures under heavy cycling.
A lower junction temperature directly reinforces the unit’s Power Cycling Capability. As detailed in technical evaluations of power and thermal cycling curves, minimizing the delta junction temperature ($Delta T_vj$) extends the mechanical fatigue lifespan of wire bonds and solder layers. Operating within an expanded temperature boundary up to $T_{vj(op)} = 150^circtext{C}$ continuous allows the FS800R07A2E3 to handle prolonged high-torque output without exceeding safe operating thresholds.
Low Stray Inductance and Conduction Loss Optimization
In high-current, low-voltage battery configurations, circulating phase currents frequently approach 800A RMS. Under high $di/dt$ switching events, stray inductance within the module packaging generates overvoltage spikes defined by $V_{spike} = -L_{sigma} cdot (di/dt)$. The FS800R07A2E3 addresses this challenge through an optimized terminal layout and internal planar busbars that constrain internal loop inductance ($L_{sCE}$) to approximately 14 nH. Lower inductance mitigates collector-emitter voltage transients during turn-off, allowing safe operation closer to the 650V breakdown threshold without requiring bulky snubbers.
The module leverages mature Field Stop IGBT technology, achieving a typical collector-emitter saturation voltage $V_{CE(sat)}$ of 1.40V at nominal 800A (25°C), increasing to only 1.55V at 150°C. This positive temperature coefficient ensures uniform current distribution between parallelized internal chips, eliminating localized hot spots and improving system-level efficiency across variable switching frequencies.
Optimized Application Environments
- Hybrid and Electric Vehicle (EV) Traction Inverters: The pin-fin direct-cooling layout provides maximum power density within compact powertrain transmission compartments.
- Heavy Commercial and Agricultural Electric Drives: High $I_{CRM}$ (1600A) ratings accommodate repetitive start-stop mechanical load cycles and steep accelerations.
- High-Power Industrial Power Semiconductors Systems: Integrated NTC thermistors allow direct temperature tracking, assisting dynamic gate-driver protection schemes.
- DC/AC Inverters for Battery Storage: High continuous collector currents maximize energy transfer in low-voltage, megawatt-level battery banks.
Application Best Match: The FS800R07A2E3 delivers peak efficiency in liquid-cooled 400V DC-bus drivetrains requiring an 800A continuous sixpack switching platform.
Key Datasheet Specifications
| Parameter | Symbol | Test Conditions / Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | $V_{CES}$ | $T_vj = 25^circtext{C}$ : 650 | V |
| Continuous DC Collector Current | $I_C$ | $T_F = 55^circtext{C}, T_{vj max} = 175^circtext{C}$ : 800 | A |
| Repetitive Peak Collector Current | $I_{CRM}$ | $t_p = 1text{ ms}$ : 1600 | A |
| Collector-Emitter Saturation Voltage | $V_{CE(sat)}$ | $I_C = 800text{A}, V_{GE} = 15text{V}, T_vj = 25^circtext{C}$ : 1.40 (typ.) | V |
| Collector-Emitter Saturation Voltage (Hot) | $V_{CE(sat)}$ | $I_C = 800text{A}, V_{GE} = 15text{V}, T_vj = 150^circtext{C}$ : 1.55 (typ.) | V |
| Gate Threshold Voltage | $V_{GE(th)}$ | $I_C = 13.0text{ mA}, V_{CE} = V_{GE}, T_vj = 25^circtext{C}$ : 5.1 to 6.5 | V |
| Stray Inductance Module | $L_{sCE}$ | Typ. 14 | nH |
| Thermal Resistance, Junction to Fluid | $R_{thJF}$ | per IGBT with direct cooling : 0.105 | K/W |
| Maximum Junction Temperature | $T_{vj max}$ | Continuous operation : 150 / Overload : 175 | °C |
| Internal NTC Sensor Resistance | $R_{25}$ | $T_C = 25^circtext{C}$ : 5.00 | kΩ |
Engineering FAQ
What sealing and mechanical tolerances are required for the pin-fin cooling cavity?
The pin-fin baseplate of the FS800R07A2E3 requires an integrated EPDM or silicone O-ring seal compressed evenly between the module flange and the aluminum cooler basin. Proper clamping screw torque sequences must be adhered to, avoiding uneven baseplate distortion that could induce substrate stress or coolant leakage.
How should gate resistance ($R_G$) be selected to control $dv/dt$ and switching losses?
Gate drive designers must balance switching dissipation ($E_{on}$, $E_{off}$) against recovery $di/dt$ and diode softness. While lower $R_G$ speeds up switching and decreases energy loss, it elevates transient voltages across the internal 14 nH loop inductance. Employing an active clamping stage or two-stage gate turn-off provides an effective safeguard against excessive turn-off voltage spikes.
Can the FS800R07A2E3 be utilized in 800V automotive battery architectures?
No. The FS800R07A2E3 carries a maximum $V_{CES}$ breakdown rating of 650V, which offers optimal margin for 300V to 450V DC links. For 800V battery architectures, semiconductors with voltage ratings of 1200V or higher are required to preserve adequate breakdown voltage margins.
The FS800R07A2E3 offers a robust, space-efficient sixpack platform for high-amperage converters operating from sub-500V DC supplies, delivering high volumetric power output through direct liquid thermal coupling.