Power Semiconductors

Explore how digital IPMs use SPI/I2C for advanced system control. Learn to dynamically configure protection, optimize gate drives, and get real-time diagnostics.

Explore the Two-Level Turn-Off (2LTO) technique for IGBT control. This guide explains how to suppress dangerous voltage spikes caused by high di/dt and parasitic inductance, overcoming the limitations of traditional gate resistors to improve power system reliability and efficiency.

Explore how high humidity and dV/dt cause silicone gel failure in IGBTs. Learn to prevent dielectric breakdown and ensure long-term module reliability.

Enhance IGBT module reliability with proper PCB protection. This engineer’s guide explains how to use IEC 60664-1 Pollution Degree to select the optimal conformal coating and prevent failures caused by environmental contamination.

Explore a detailed comparison of IGBT coolants. This guide analyzes the performance, cost, and safety of water, glycol, and dielectric fluids to help you select the optimal choice for high-power liquid cooling applications.

Discover why the MOSFET body diode limits efficiency in high-frequency synchronous rectification. Learn how its slow reverse recovery (Qrr) causes significant switching losses and voltage spikes, and explore practical engineering solutions like parallel Schottky diodes and dead-time optimization to solve the problem.

Delve into a quantitative analysis of how an IGBT’s nonlinear parasitic capacitances (Cies, Coes, Cres) critically impact switching loss. This article moves beyond basic datasheet values to explain why simple models fail and provides a detailed breakdown of how to accurately quantify and mitigate turn-on (Eon) and turn-off (Eoff) losses for high-performance power electronic designs.