The Fuji 1MBi2400VD-170E is an IGBT (Insulated Gate Bipolar Transistor) module with the following features and specifications:
Features:
- Low VCE(sat): This indicates that the module has a low voltage drop (saturation voltage) across the collector-emitter terminals when it is in the ON state, which results in lower power losses and higher efficiency.
- Compact Package: The module is designed in a compact package, which can be advantageous when space is limited.
- P.C. Board Mount: It is designed for mounting on printed circuit boards (PCBs), making it suitable for integration into electronic control systems.
- Converter Diode Bridge: The module likely includes a diode bridge for rectifying AC input voltages in applications such as inverters and power supplies.
- Dynamic Brake Circuit: This feature indicates the presence of a dynamic braking mechanism, which can be important for rapid stopping or deceleration of motors in various applications.
Applications:
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply (UPS)
Maximum Ratings and Characteristics:
- Collector-Emitter Voltage (Vces): 1700V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (Ic): 1200A
- Collector Current (Peak, Icp): 2400A
- Collector Power Dissipation (Pc): 2700W
- Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
Mounting Screw Torque: 3.5 N·m (Newton-meters)